Process Integration

Problem Statement

• Developing a novel silicon based BICMOS process for Bipolar Junction Transistor having very few additional simple process steps along with CMOS fabrication
• Process is having polysilicon based emitter and extrinsic base contact
• Main focus of this process is to develop a transitor which should have better figure of merits such unity current and power gain frequencies and also better breakdown voltage and Early voltage suitable for Radio Frequency application